940 nm high radiant emitters technical data HEMT-3301 hemt-1001 features ? nonsaturating, high radiant flux output ? efficient at low currents, combined with high current capability ? three package styles ? operating temperature range -55 c to +100 c ? medium-wide radiation patterns ? radiated spectrum matches response of silicon photodetectors description the HEMT-3301 and hemt-1001 are infrared emitters, using a mesa structure gaas on gaas infrared diode, ired, optimized for maximum quantum efficiency at a peak wavelength of 940 nm. the HEMT-3301 and hemt-1001 emitters are untinted, undiffused plastic packages with medium- wide radiation patterns. these package dimensions medium-wide and wide radiation patterns eliminate the beam focusing problems that are encountered with emitters that have narrow radiation patterns. applications include optical transducers, optical part counters, smoke detectors, covert identification, paper tape and card readers, and optical encoders.
2 absolute maximum ratings at t a = 25 c power dissipation .................................................................... 150 mw dc forward current .................................................................. 100 ma (derate as specified in figure 6) peak forward current ............................................................. 1000 ma (time average current as determined from figure 7) ired junction temperature ........................................................ 110 c operating and storage temperature ........................... -55 c to +100 c lead soldering temperature .................................. 260 c for 5 seconds (1.6 mm (0.063 in.) from emitter body) electrical/optical characteristics at t a = 25 c symbol description min. typ. max. units test conditions fig. i e radiant intensity HEMT-3301 2.5 4.0 mw/sr i f = 20 ma 4, 5 hemt-1001 1.0 2.0 d i e / d t temperature coefficient -0.58 %/ c measured at l peak 1 for radiant intensity [1] dl / d t temperature coefficient 0.3 nm/ c measured at l peak 1 for peak wavelength [2] l peak peak wavelength 940 nm measured at l peak 1 2 q 1/2 half intensity [3] total angle HEMT-3301 50 deg. i f = 20 ma 8 hemt-1001 60 9 t r output rise time 1700 ns i peak = 20 ma (10% to 90%) t f output fall time 700 ns i peak = 20 ma (90% to 10%) c capacitance 30 pf v f = 0; f = 1 mhz v r reverse breakdown 5.0 v i r = 10 m a voltage v f forward voltage 1.30 1.50 v i f = 100 ma 2 1.15 i f = 20 ma r q j-pin thermal resistance HEMT-3301 260 c/w ired junction to hemt-1001 290 to cathode lead notes: 1. radiant intensity at ambient temperature i e (t a ) = i e (25 c) + ( d i e / d t) (t a - 25 c)/100. 2. peak wavelength at ambient temperature: l peak (t a ) = l peak (25 c) + ( dl / d t) (t a - 25 c). 3. q 1/2 is the off-axis angle from emitter centerline where the radiant intensity is half the on-axis value. 4. approximate radiant flux output within a cone angle of 2 q : f e (2 q ) = [ f e ( q )/i e (0)] i e (t a ); f e ( q )/i e (0) obtained from figure 8 or 9.
3 figure 1. radiated spectrum. figure 2. forward current vs. forward voltage. figure 5. relative efficiency vs. peak forward current. figure 6. maximum dc forward current vs. ambient temperature. derating based on t jmax = 110 c. figure 3. forward voltage tempera- ture coefficient vs. forward current. figure 4. relative radiant intensity vs. dc forward current.
figure 8. far field radiation pattern, HEMT-3301. figure 7. maximum tolerable peak current vs. peak duration (i peak max determined from temperature derated i dc max ). figure 9. far field radiation pattern, hemt-1001. www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies, inc. obsoletes 5954-8473e 5964-3813e (11/99)
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